GAN7R0-150LBEZ

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Overview of GAN7R0-150LBEZ

Part NumberGAN7R0-150LBEZ
ManufacturerNexperia
Description150 V, 7 MOHM GALLIUM NITRIDE (G
DatasheetsDownload GAN7R0-150LBEZ Datasheet PDFPDF Icon
Price for GAN7R0-150LBEZ

Specification of GAN7R0-150LBEZ

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Nexperia USA Inc.
FET Type
P-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
28A
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
7mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
7.6 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
865 pF @ 85 V
FET Feature
-
Power Dissipation (Max)
28W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-FCLGA (3.2x2.2)
Package / Case
3-VLGA

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