GB02SHT03-46

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Overview of GB02SHT03-46

Part NumberGB02SHT03-46
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SIL CARBIDE 300V 4A TO46
DatasheetsDownload GB02SHT03-46 Datasheet PDFPDF Icon
Price for GB02SHT03-46

Specification of GB02SHT03-46

Status
Active
Package
Bulk
Supplier
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
300 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 1 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
5 A @ 300 V
Capacitance @ Vr, F
76pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Supplier Device Package
TO-46
Operating Temperature - Junction
-55C ~ 225C

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