GB10SLT12-252

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Overview of GB10SLT12-252

Part NumberGB10SLT12-252
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SIL CARB 1.2KV 10A TO252
DatasheetsDownload GB10SLT12-252 Datasheet PDFPDF Icon
Price for GB10SLT12-252

Specification of GB10SLT12-252

Status
Obsolete
Package
Tube
Supplier
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
2 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
250 A @ 1200 V
Capacitance @ Vr, F
520pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252
Operating Temperature - Junction
-55C ~ 175C

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