GB20SLT12-247

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Overview of GB20SLT12-247

Part NumberGB20SLT12-247
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SIL CARB 1.2KV 20A TO247-2
DatasheetsDownload GB20SLT12-247 Datasheet PDFPDF Icon
Price for GB20SLT12-247

Specification of GB20SLT12-247

Status
Obsolete
Package
Bulk
Supplier
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
20A
Voltage - Forward (Vf) (Max) @ If
2 V @ 20 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 A @ 1200 V
Capacitance @ Vr, F
968pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247-2
Operating Temperature - Junction
-55C ~ 175C

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