GC11N65T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of GC11N65T

Part NumberGC11N65T
ManufacturerGoford Semiconductor
DescriptionN650V,RD(MAX)<360M@10V,VTH2.5V~4
DatasheetsDownload GC11N65T Datasheet PDFPDF Icon
Price for GC11N65T

Specification of GC11N65T

Status
Active
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
901 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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Contact Information

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Introduction

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