GC20N65F

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Overview of GC20N65F

Part NumberGC20N65F
ManufacturerGoford Semiconductor
DescriptionN650V,RD(MAX)<170M@10V,VTH2.5V~4
DatasheetsDownload GC20N65F Datasheet PDFPDF Icon
Price for GC20N65F

Specification of GC20N65F

Status
Active
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1724 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack

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