GD30MPS12H

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Overview of GD30MPS12H

Part NumberGD30MPS12H
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SIL CARB 1.2KV 55A TO247-2
DatasheetsDownload GD30MPS12H Datasheet PDFPDF Icon
Price for GD30MPS12H

Specification of GD30MPS12H

Status
Active
Series
SiC Schottky MPS™
Package
Tube
Supplier
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
55A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 30 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
20 A @ 1200 V
Capacitance @ Vr, F
1101pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247-2
Operating Temperature - Junction
-55C ~ 175C

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