GE04MPS06E

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Overview of GE04MPS06E

Part NumberGE04MPS06E
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SIL CARB 650V 11A TO252-2
DatasheetsDownload GE04MPS06E Datasheet PDFPDF Icon
Price for GE04MPS06E

Specification of GE04MPS06E

Status
Discontinued at Digi-Key
Series
SiC Schottky MPS™
Package
Cut Tape (CT),Digi-Reel®
Supplier
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
11A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
5 A @ 650 V
Capacitance @ Vr, F
186pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-2
Operating Temperature - Junction
-55C ~ 175C

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