GE12050EEA3

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Overview of GE12050EEA3

Part NumberGE12050EEA3
ManufacturerGE Aerospace
Description1200V 475A 6-Pack SiC Module
DatasheetsDownload GE12050EEA3 Datasheet PDFPDF Icon
Price for GE12050EEA3

Specification of GE12050EEA3

Status
Active
Series
SiC Power
Package
Bulk
Supplier
GE Aerospace
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
475A (Tc)
Rds On (Max) @ Id, Vgs
4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id
4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs
1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
29300pF @ 600V
Power - Max
1250W (Tc)
Operating Temperature
-55C ~ 150C (Tc)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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