GE17045EEA3

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Overview of GE17045EEA3

Part NumberGE17045EEA3
ManufacturerGE Aerospace
Description1700V 425A SiC Six-Pack Module
DatasheetsDownload GE17045EEA3 Datasheet PDFPDF Icon
Price for GE17045EEA3

Specification of GE17045EEA3

Status
Active
Series
SiC Power
Package
Bulk
Supplier
GE Aerospace
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25C
425A (Tc)
Rds On (Max) @ Id, Vgs
4.45mOhm @ 425A, 20V
Vgs(th) (Max) @ Id
4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs
1207nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
29100pF @ 900V
Power - Max
1250W (Tc)
Operating Temperature
-55C ~ 150C (Tc)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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