GE2X10MPS06D

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Overview of GE2X10MPS06D

Part NumberGE2X10MPS06D
ManufacturerGeneSiC Semiconductor
Description650V 20A TO-247-3 SIC SCHOTTKY M
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Price for GE2X10MPS06D

Specification of GE2X10MPS06D

Status
Obsolete
Series
SiC Schottky MPS™
Package
Tube
Supplier
GeneSiC Semiconductor
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
23A (DC)
Voltage - Forward (Vf) (Max) @ If
-
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Operating Temperature - Junction
-55C ~ 175C
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3

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