GPA030A135MN-FDR

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Overview of GPA030A135MN-FDR

Part NumberGPA030A135MN-FDR
ManufacturerSemiQ
DescriptionIGBT 1350V 60A 329W TO3PN
DatasheetsDownload GPA030A135MN-FDR Datasheet PDFPDF Icon
Price for GPA030A135MN-FDR

Specification of GPA030A135MN-FDR

Status
Obsolete
Package
Tube
Supplier
SemiQ
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1350 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Power - Max
329 W
Switching Energy
4.4mJ (on), 1.18mJ (off)
Input Type
Standard
Gate Charge
300 nC
Td (on/off) @ 25C
30ns/145ns
Test Condition
600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)
450 ns
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN

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