GPI65005DF

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Overview of GPI65005DF

Part NumberGPI65005DF
ManufacturerGaNPower
DescriptionGANFET N-CH 650V 5A DFN 5X6
DatasheetsDownload GPI65005DF Datasheet PDFPDF Icon
Price for GPI65005DF

Specification of GPI65005DF

Status
Active
Package
Tape & Reel (TR)
Supplier
GaNPower
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
5A
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.4V @ 1.75mA
Gate Charge (Qg) (Max) @ Vgs
2.6 nC @ 6 V
Vgs (Max)
+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds
45 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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