GT045N10M

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Overview of GT045N10M

Part NumberGT045N10M
ManufacturerGoford Semiconductor
DescriptionN100V, 120A,RD<4.5M@10V,VTH2V~4V
DatasheetsDownload GT045N10M Datasheet PDFPDF Icon
Price for GT045N10M

Specification of GT045N10M

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4198 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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