GT10N10

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Overview of GT10N10

Part NumberGT10N10
ManufacturerGoford Semiconductor
DescriptionN100V, 7A,RD<140M@10V,VTH1.5V~2.
DatasheetsDownload GT10N10 Datasheet PDFPDF Icon
Price for GT10N10

Specification of GT10N10

Status
Active
Series
GT
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
140mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
206 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
17W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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