GT20N135SRA,S1E

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Overview of GT20N135SRA,S1E

Part NumberGT20N135SRA,S1E
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionD-IGBT TO-247 VCES=1350V IC=40A
DatasheetsDownload GT20N135SRA,S1E Datasheet PDFPDF Icon
Price for GT20N135SRA,S1E

Specification of GT20N135SRA,S1E

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1350 V
Current - Collector (Ic) (Max)
40 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Power - Max
312 W
Switching Energy
-, 700J (off)
Input Type
Standard
Gate Charge
185 nC
Td (on/off) @ 25C
-
Test Condition
300V, 40A, 39Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247

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