GT30N135SRA,S1E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of GT30N135SRA,S1E

Part NumberGT30N135SRA,S1E
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionD-IGBT TO-247 VCES=1350V IC=30A
DatasheetsDownload GT30N135SRA,S1E Datasheet PDFPDF Icon
Price for GT30N135SRA,S1E

Specification of GT30N135SRA,S1E

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1350 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 60A
Power - Max
348 W
Switching Energy
-, 1.3mJ (off)
Input Type
Standard
Gate Charge
270 nC
Td (on/off) @ 25C
-
Test Condition
300V, 60A, 39Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247

Parts Information

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)

Contact Information

Fields marked with a * are required

Introduction

GT30N135SRA,S1E is in Stock, Find GT30N135SRA,S1E electronics components stock, Technical information, Inventory and Price here at Ic-find.com, send us an inquiry for GT30N135SRA,S1E to get the price and lead time now! We can offer fast shipment via DHL/FedEx/UPS.

Email us: [email protected] or RFQ GT30N135SRA,S1E Online.

FAQ

  • 1 How to place an order?[Click to Expand]

  • 2 What payment methods do you offer?[Click to Expand]

  • 3 How do you handle the shipment?[Click to Expand]

  • 4 I can't find a part on IC-find, what should I do?[Click to Expand]

Recommend Products

Your RFQ Preview

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)
Continue Shopping
Go RFQ Page