GT40QR21(STA1,E,D

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Overview of GT40QR21(STA1,E,D

Part NumberGT40QR21(STA1,E,D
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionDISCRETE IGBT TRANSISTOR TO-3PN(
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Price for GT40QR21(STA1,E,D

Specification of GT40QR21(STA1,E,D

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
40 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 40A
Power - Max
230 W
Switching Energy
-, 290J (off)
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
-
Test Condition
280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr)
600 ns
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)

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