GT50N322A

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Overview of GT50N322A

Part NumberGT50N322A
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F IGBT / TRANSISTOR TO-3PN IC
DatasheetsDownload GT50N322A Datasheet PDFPDF Icon
Price for GT50N322A

Specification of GT50N322A

Status
Active
Package
Tray
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 60A
Power - Max
156 W
Switching Energy
-
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
-
Test Condition
-
Reverse Recovery Time (trr)
800 ns
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)

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