GT60N321(Q)

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Overview of GT60N321(Q)

Part NumberGT60N321(Q)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionIGBT 1000V 60A 170W TO3P LH
Price for GT60N321(Q)

Specification of GT60N321(Q)

Status
Obsolete
Package
Tube
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 60A
Power - Max
170 W
Switching Energy
-
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
330ns/700ns
Test Condition
-
Reverse Recovery Time (trr)
2.5 s
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3PL
Supplier Device Package
TO-3P(LH)

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