GT650N15K

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Overview of GT650N15K

Part NumberGT650N15K
ManufacturerGoford Semiconductor
DescriptionN150V,RD(MAX)<65M@10V,VTH2.5V~4.
DatasheetsDownload GT650N15K Datasheet PDFPDF Icon
Price for GT650N15K

Specification of GT650N15K

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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