HAT1108C-EL-E

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Overview of HAT1108C-EL-E

Part NumberHAT1108C-EL-E
ManufacturerRenesas Electronics America
DescriptionHAT1108C - Pch Single Power Mo
Price for HAT1108C-EL-E

Specification of HAT1108C-EL-E

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
194mOhm @ 750mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
6-CMFPAK
Package / Case
6-SMD, Flat Leads

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