HAT2203C-EL-E

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Overview of HAT2203C-EL-E

Part NumberHAT2203C-EL-E
ManufacturerRenesas Electronics America
DescriptionHAT2203C-EL-E - SILICON N CHANNE
Price for HAT2203C-EL-E

Specification of HAT2203C-EL-E

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
90mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
165 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
6-CMFPAK
Package / Case
6-SMD, Flat Leads

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