HGT1S10N120BNST

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Overview of HGT1S10N120BNST

Part NumberHGT1S10N120BNST
Manufactureronsemi
DescriptionIGBT 1200V 35A 298W TO263AB
DatasheetsDownload HGT1S10N120BNST Datasheet PDFPDF Icon
Price for HGT1S10N120BNST

Specification of HGT1S10N120BNST

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
35 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298 W
Switching Energy
320J (on), 800J (off)
Input Type
Standard
Gate Charge
100 nC
Td (on/off) @ 25C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
DPAK (TO-263)

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