HGTG27N120BN

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Overview of HGTG27N120BN

Part NumberHGTG27N120BN
ManufacturerFairchild Semiconductor
DescriptionINSULATED GATE BIPOLAR TRANSISTO
DatasheetsDownload HGTG27N120BN Datasheet PDFPDF Icon
Price for HGTG27N120BN

Specification of HGTG27N120BN

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
72 A
Current - Collector Pulsed (Icm)
216 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 27A
Power - Max
500 W
Switching Energy
2.2mJ (on), 2.3mJ (off)
Input Type
Standard
Gate Charge
270 nC
Td (on/off) @ 25C
24ns/195ns
Test Condition
960V, 27A, 3Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247

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