HGTP12N60A4D

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Overview of HGTP12N60A4D

Part NumberHGTP12N60A4D
ManufacturerFairchild Semiconductor
DescriptionINSULATED GATE BIPOLAR TRANSISTO
DatasheetsDownload HGTP12N60A4D Datasheet PDFPDF Icon
Price for HGTP12N60A4D

Specification of HGTP12N60A4D

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
54 A
Current - Collector Pulsed (Icm)
96 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Power - Max
167 W
Switching Energy
55J (on), 50J (off)
Input Type
Standard
Gate Charge
78 nC
Td (on/off) @ 25C
17ns/96ns
Test Condition
390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)
30 ns
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3

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