HN4B102J(TE85L,F)

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Overview of HN4B102J(TE85L,F)

Part NumberHN4B102J(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F POWER TRANSISTOR SMV MOQ=30
DatasheetsDownload HN4B102J(TE85L,F) Datasheet PDFPDF Icon
Price for HN4B102J(TE85L,F)

Specification of HN4B102J(TE85L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
1.8A, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 200mA, 2V
Power - Max
750mW
Frequency - Transition
-
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Supplier Device Package
SMV

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