HN4C51J(TE85L,F)

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Overview of HN4C51J(TE85L,F)

Part NumberHN4C51J(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS 2NPN 120V 0.1A SMV
DatasheetsDownload HN4C51J(TE85L,F) Datasheet PDFPDF Icon
Price for HN4C51J(TE85L,F)

Specification of HN4C51J(TE85L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN (Dual) Common Base
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Supplier Device Package
SMV

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