HP8M51TB1

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Overview of HP8M51TB1

Part NumberHP8M51TB1
ManufacturerROHM Semiconductor
DescriptionHP8M51TB1 IS LOW ON-RESISTANCE A
DatasheetsDownload HP8M51TB1 Datasheet PDFPDF Icon
Price for HP8M51TB1

Specification of HP8M51TB1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
4.5A (Ta)
Rds On (Max) @ Id, Vgs
170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V, 26.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 50V, 1430pF @ 50V
Power - Max
3W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-HSOP

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