HS8MA2TCR1

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Overview of HS8MA2TCR1

Part NumberHS8MA2TCR1
ManufacturerROHM Semiconductor
Description30V DUAL COMMON DRAIN PCH+NCH PO
DatasheetsDownload HS8MA2TCR1 Datasheet PDFPDF Icon
Price for HS8MA2TCR1

Specification of HS8MA2TCR1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
5A (Ta), 7A (Ta)
Rds On (Max) @ Id, Vgs
80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.8nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 10V, 365pF @ 10V
Power - Max
2W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
DFN3333-9DC

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