HSG1002VE-TL-E

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Overview of HSG1002VE-TL-E

Part NumberHSG1002VE-TL-E
ManufacturerRenesas Electronics America
DescriptionRF 0.035A C BAND GERMANIUM NPN
DatasheetsDownload HSG1002VE-TL-E Datasheet PDFPDF Icon
Price for HSG1002VE-TL-E

Specification of HSG1002VE-TL-E

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
3.5V
Frequency - Transition
38GHz
Noise Figure (dB Typ @ f)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain
8dB ~ 19.5dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (Ic) (Max)
35mA
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Supplier Device Package
4-MFPAK

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