HTMN5130SSD-13

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Overview of HTMN5130SSD-13

Part NumberHTMN5130SSD-13
ManufacturerDiodes Incorporated
DescriptionMOSFET 2N-CH 55V 2.6A 8SOIC
DatasheetsDownload HTMN5130SSD-13 Datasheet PDFPDF Icon
Price for HTMN5130SSD-13

Specification of HTMN5130SSD-13

Status
Active
Package
Tape & Reel (TR)
Supplier
Diodes Incorporated
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25C
2.6A
Rds On (Max) @ Id, Vgs
130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
218.7pF @ 25V
Power - Max
1.7W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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