HUF75339S3ST

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Overview of HUF75339S3ST

Part NumberHUF75339S3ST
ManufacturerFairchild Semiconductor
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload HUF75339S3ST Datasheet PDFPDF Icon
Price for HUF75339S3ST

Specification of HUF75339S3ST

Status
Active
Series
UltraFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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