HUF76633S3ST

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Overview of HUF76633S3ST

Part NumberHUF76633S3ST
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 100V 39A D2PAK
DatasheetsDownload HUF76633S3ST Datasheet PDFPDF Icon
Price for HUF76633S3ST

Specification of HUF76633S3ST

Status
Obsolete
Series
UltraFET™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 39A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
16V
Input Capacitance (Ciss) (Max) @ Vds
1820 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
145W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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