HUFA75639S3ST

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Overview of HUFA75639S3ST

Part NumberHUFA75639S3ST
ManufacturerFairchild Semiconductor
Description56A, 100V, 0.025OHM, N-CHANNEL,
DatasheetsDownload HUFA75639S3ST Datasheet PDFPDF Icon
Price for HUFA75639S3ST

Specification of HUFA75639S3ST

Status
Active
Series
Automotive, AEC-Q101, UltraFET™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263AB)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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