IAUC100N10S5L054ATMA1

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Overview of IAUC100N10S5L054ATMA1

Part NumberIAUC100N10S5L054ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET_(75V 120V( PG-TDSON-8
DatasheetsDownload IAUC100N10S5L054ATMA1 Datasheet PDFPDF Icon
Price for IAUC100N10S5L054ATMA1

Specification of IAUC100N10S5L054ATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
101A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 64A
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3744 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-34
Package / Case
8-PowerTDFN

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