IDW10G65C5XKSA1

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Overview of IDW10G65C5XKSA1

Part NumberIDW10G65C5XKSA1
ManufacturerInfineon Technologies
DescriptionDIODE SIL CARB 650V 10A TO247-3
DatasheetsDownload IDW10G65C5XKSA1 Datasheet PDFPDF Icon
Price for IDW10G65C5XKSA1

Specification of IDW10G65C5XKSA1

Status
Active
Series
CoolSiC™+
Package
Tube
Supplier
Infineon Technologies
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
180 A @ 650 V
Capacitance @ Vr, F
300pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
Operating Temperature - Junction
-55C ~ 175C

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