IDWD10G120C5XKSA1

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Overview of IDWD10G120C5XKSA1

Part NumberIDWD10G120C5XKSA1
ManufacturerInfineon Technologies
DescriptionDIODE SIL CARB 1.2KV 34A TO247-2
DatasheetsDownload IDWD10G120C5XKSA1 Datasheet PDFPDF Icon
Price for IDWD10G120C5XKSA1

Specification of IDWD10G120C5XKSA1

Status
Active
Series
CoolSiC™+
Package
Tube
Supplier
Infineon Technologies
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
34A
Voltage - Forward (Vf) (Max) @ If
1.65 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
80 A @ 1200 V
Capacitance @ Vr, F
730pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
PG-TO247-2
Operating Temperature - Junction
-55C ~ 175C

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