IGLD60R190D1AUMA3

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Overview of IGLD60R190D1AUMA3

Part NumberIGLD60R190D1AUMA3
ManufacturerInfineon Technologies
DescriptionGAN HV
DatasheetsDownload IGLD60R190D1AUMA3 Datasheet PDFPDF Icon
Price for IGLD60R190D1AUMA3

Specification of IGLD60R190D1AUMA3

Status
Active
Series
CoolGaN™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 960A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-LSON-8-1
Package / Case
8-LDFN Exposed Pad

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