IGT60R070D1E8220ATMA1

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Overview of IGT60R070D1E8220ATMA1

Part NumberIGT60R070D1E8220ATMA1
ManufacturerInfineon Technologies
DescriptionGAN HV
Price for IGT60R070D1E8220ATMA1

Specification of IGT60R070D1E8220ATMA1

Status
Obsolete
Series
CoolGaN™
Package
Bulk
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN

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