IMBG120R140M1HXTMA1

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Overview of IMBG120R140M1HXTMA1

Part NumberIMBG120R140M1HXTMA1
ManufacturerInfineon Technologies
DescriptionSICFET N-CH 1.2KV 18A TO263
DatasheetsDownload IMBG120R140M1HXTMA1 Datasheet PDFPDF Icon
Price for IMBG120R140M1HXTMA1

Specification of IMBG120R140M1HXTMA1

Status
Active
Series
CoolSiC™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
189mOhm @ 6A, 18V
Vgs(th) (Max) @ Id
5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
13.4 nC @ 18 V
Vgs (Max)
+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds
491 pF @ 800 V
FET Feature
Standard
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-12
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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