IMT65R083M1HXUMA1

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Overview of IMT65R083M1HXUMA1

Part NumberIMT65R083M1HXUMA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Price for IMT65R083M1HXUMA1

Specification of IMT65R083M1HXUMA1

Status
Active
Series
CoolSiC™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
-
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
-
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-1
Package / Case
8-PowerSFN

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