IMW65R048M1HXKSA1

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Overview of IMW65R048M1HXKSA1

Part NumberIMW65R048M1HXKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET 650V NCH SIC TRENCH
DatasheetsDownload IMW65R048M1HXKSA1 Datasheet PDFPDF Icon
Price for IMW65R048M1HXKSA1

Specification of IMW65R048M1HXKSA1

Status
Active
Series
CoolSIC™ M1
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id
5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1118 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3

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