IMZ120R030M1HXKSA1

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Overview of IMZ120R030M1HXKSA1

Part NumberIMZ120R030M1HXKSA1
ManufacturerInfineon Technologies
DescriptionSICFET N-CH 1.2KV 56A TO247-4
DatasheetsDownload IMZ120R030M1HXKSA1 Datasheet PDFPDF Icon
Price for IMZ120R030M1HXKSA1

Specification of IMZ120R030M1HXKSA1

Status
Active
Series
CoolSiC™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2120 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-1
Package / Case
TO-247-4

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