IPA180N10N3G

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Overview of IPA180N10N3G

Part NumberIPA180N10N3G
ManufacturerInfineon Technologies
Description28A, 100V, 0.018OHM, N-CHANNEL,
DatasheetsDownload IPA180N10N3G Datasheet PDFPDF Icon
Price for IPA180N10N3G

Specification of IPA180N10N3G

Status
Active
Series
OptiMOS™ 3
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
3.5V @ 35A
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-111
Package / Case
TO-220-3 Full Pack

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