IPA60R650CEE8210XKSA1

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Overview of IPA60R650CEE8210XKSA1

Part NumberIPA60R650CEE8210XKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET
Price for IPA60R650CEE8210XKSA1

Specification of IPA60R650CEE8210XKSA1

Status
Obsolete
Series
CoolMOS™
Package
Bulk
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200A
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220 Full Pack
Package / Case
TO-220-3 Full Pack

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