IPA80R650CEXKSA1

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Overview of IPA80R650CEXKSA1

Part NumberIPA80R650CEXKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 800V 4.5A TO220
DatasheetsDownload IPA80R650CEXKSA1 Datasheet PDFPDF Icon
Price for IPA80R650CEXKSA1

Specification of IPA80R650CEXKSA1

Status
Discontinued at Digi-Key
Series
CoolMOS™ CE
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 470A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack

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