IPAN60R180P7SXKSA1

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Overview of IPAN60R180P7SXKSA1

Part NumberIPAN60R180P7SXKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET 600V TO220 FULL PACK
DatasheetsDownload IPAN60R180P7SXKSA1 Datasheet PDFPDF Icon
Price for IPAN60R180P7SXKSA1

Specification of IPAN60R180P7SXKSA1

Status
Active
Series
CoolMOS™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 280A
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1081 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
26W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack

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