IPB009N03LGATMA1

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Overview of IPB009N03LGATMA1

Part NumberIPB009N03LGATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 30V 180A TO263-7
DatasheetsDownload IPB009N03LGATMA1 Datasheet PDFPDF Icon
Price for IPB009N03LGATMA1

Specification of IPB009N03LGATMA1

Status
Obsolete
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
Nexperia USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
36.6 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
2090 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669

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