IPB026N06NATMA1

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Overview of IPB026N06NATMA1

Part NumberIPB026N06NATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 60V 25A/100A D2PAK
DatasheetsDownload IPB026N06NATMA1 Datasheet PDFPDF Icon
Price for IPB026N06NATMA1

Specification of IPB026N06NATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.8V @ 75A
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 136W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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